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IRFR1N60ATR

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60ATRLPBF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60ATRPBF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60ATRRPBF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60A_15

Power MOSFET

文件:2.6729 Mbytes 页数:7 Pages

LUCKY-LIGHT

IRFR1N60APBF

Power MOSFET

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60APBF-BE3AB

Power MOSFET

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60ATRLPBFA

Power MOSFET

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60ATRPBFA

Power MOSFET

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR1N60ATRPBF-BE3AB

Power MOSFET

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFR1N60A

  • 功能描述:

    MOSFET N-Chan 600V 1.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY
19+
TO-252-2
10469
询价
VISHAY/威世
25+
TO252
20300
VISHAY/威世原装特价IRFR1N60A即刻询购立享优惠#长期有货
询价
IR
24+
D-Pak
8866
询价
IR
23+
TO252
5000
原装正品,假一罚十
询价
IR
2015+
D-Pak
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
24+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
IR
18+
D-PAK
41200
原装正品,现货特价
询价
IR
23+
SOT252
50000
全新原装正品现货,支持订货
询价
IR
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多IRFR1N60A供应商 更新时间2025-12-12 16:03:00