N-Channel Enhancement Mode MOSFET

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=180A,RDS(ON)

文件：733.3 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

N-Channel MOSFET Transistor

文件：335.25 Kbytes 页数：2 Pages

ISC

无锡固电

100V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 TO-247 封装

\n优势:\n• 符合 RoHS;

Infineon

英飞凌

HEXFET Power MOSFET

VDSS 100V RDS(on) typ. 3.7mΩ max. 4.5mΩ ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Aplications

文件：288.71 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：294.22 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：294.22 Kbytes 页数：8 Pages

IRF