IRFP240中文资料20A, 200V, 0.180 Ohm, N-Channel Power MOSFET数据手册Renesas规格书
IRFP240规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 20A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
技术参数
- 型号：
IRFP240
- 功能描述：
MOSFET N-Chan 200V 20 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
280 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
INTERNATIONALRECTIFIER |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
25+ |
TO3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
23+ |
TO-247AC |
19526 |
询价 | |||
IR |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
HARRIS哈里斯 |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
询价 | ||
SAMSUNG/三星 |
25+ |
TO-3P |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
VISHAY/威世 |
21+ |
TO-247 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 |
