SMPS MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：122.69 Kbytes 页数：8 Pages

IRF

采用 SOT-223 封装的 150V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters

文件：147.52 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：203.28 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：203.28 Kbytes 页数：8 Pages

IRF