Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors Features • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority carrier device

文件：176.97 Kbytes 页数：5 Pages

GESS

Trans MOSFET N-CH 80V 12A 3-Pin TO-39

NJS

新泽西半导体

Trans MOSFET N-CH 80V 12A 3-Pin TO-39

NJS

新泽西半导体

Reference Diode

文件：126.55 Kbytes 页数：4 Pages

NSC

国半

Reference Diode

文件：126.55 Kbytes 页数：4 Pages

NSC

国半

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

文件：100.01 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉