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IXFH22N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH22N50P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Swit

IXYS

IXYS Corporation

IXFV22N50P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Swit

IXYS

IXYS Corporation

IXFV22N50PS

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Swit

IXYS

IXYS Corporation

IXGH22N50B

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features •InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on

IXYS

IXYS Corporation

IXGH22N50BS

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features •InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on

IXYS

IXYS Corporation

IXTH22N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH22N50P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTQ22N50P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTQ22N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRFC22N50AB

  • 制造商:

    Vishay Semiconductors

  • 功能描述:

    MOSFET N-CHANNEL 500V - Bulk

供应商型号品牌批号封装库存备注价格
IR
23+
SMD
12500
全新原装现货热卖,价格优势
询价
IR
22+
SMD
6000
终端可免费供样,支持BOM配单
询价
IR
23+
SMD
8000
只做原装现货
询价
IR
23+
SMD
7000
询价
VISHAY/威世
23+
STAND
12116
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
1923+
裸片
2000
公司原装现货特价处理
询价
IR
2016+
Thewafer
6528
房间原装进口现货假一赔十
询价
IR
22+
Thewafer
8900
英瑞芯只做原装正品!!!
询价
INFINEON
1503+
SMD
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多IRFC22N50AB供应商 更新时间2025-5-29 16:53:00