IRFBG30中文资料KERSEMI数据手册PDF规格书
IRFBG30规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
产品属性
- 型号：
IRFBG30
- 功能描述：
MOSFET 1000V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+/25+ |
TO-220 |
100 |
原装正品现货库存价优 |
询价 | ||
IR |
23+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
2023+ |
TO-220A |
5800 |
进口原装,现货热卖 |
询价 | ||
IR |
1430+ |
TO220 |
5800 |
全新原装,公司大量现货供应,绝对正品 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR/VISH |
24+ |
65230 |
询价 | ||||
INTERSIL |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
IR |
22+ |
TO-220 |
39503 |
原装正品现货 |
询价 | ||
VISHAY/威世 |
24+ |
TO-220 |
60000 |
全新原装现货 |
询价 | ||
VISHAY/威世 |
21+ |
TO-220AB |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 |
