IRFBG30中文资料威世科技数据手册PDF规格书
IRFBG30规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
产品属性
- 型号：
IRFBG30
- 功能描述：
MOSFET 1000V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
IR |
2022 |
1120 |
询价 | ||||
IR/VISH |
24+ |
65230 |
询价 | ||||
IR |
20+ |
TO-220 |
4520 |
原装正品现货 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
原装 |
1923+ |
TO-220 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
询价 | ||
IR |
23+ |
TO-220 |
9526 |
询价 | |||
Vishay PCS |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
1211+ |
TO-220 |
1550 |
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询价 |
