IRFBE30中文资料IRF数据手册PDF规格书
IRFBE30规格书详情
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
O Dynamic dv/dt Rating
O Repetitive Avalanche Rated
O Fast Switching
O Ease of Paralleling
O Simple Drive Requirements
产品属性
- 型号:
IRFBE30
- 功能描述:
MOSFET 800V Single N-Channel HEXFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
55 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
23+ |
TO-220 |
12000 |
全新原装假一赔十 |
询价 | ||
IR |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY |
1550+ |
TO-220 |
278 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
24+ |
TO220 |
200 |
大批量供应优势库存热卖 |
询价 | ||
IR |
24+ |
TO 220 |
161347 |
明嘉莱只做原装正品现货 |
询价 | ||
sil |
23+ |
NA |
406 |
专做原装正品,假一罚百! |
询价 | ||
VISHAY/威世 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
VISHAY |
2018+ |
TO-220 |
11256 |
只做进口原装正品!假一赔十! |
询价 |
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