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IRF9630

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

文件:175.1 Kbytes 页数:6 Pages

IRF

IRF9630

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

Vishay

威世

IRF9630

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

Infineon

英飞凌

IRF9630

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

Renesas

瑞萨

IRF9630_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts

文件:159.1 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF9630PBF

Power MOSFETS

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of

文件:153.32 Kbytes 页数:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF9630PBF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

文件:547.24 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF9630PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件:2.9463 Mbytes 页数:7 Pages

KERSEMI

IRF9630PBF-BE3

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件:285.91 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF9630S

Repetitive avalanche rated

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It prov

文件:182.57 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

技术参数

  • 漏源电压(Vdss):

    200V

  • 栅源极阈值电压(最大值):

    4V @ 250uA

  • 漏源导通电阻(最大值):

    800 mΩ @ 3.9A,10V

  • 类型:

    P 沟道

  • 功率耗散(最大值):

    74W

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
25+
TO-220
45000
INFINEON/英飞凌全新现货IRF9630即刻询购立享优惠#长期有排单订
询价
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON/英飞凌
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
IR
24+/25+
79
原装正品现货库存价优
询价
IOR
07PB
TO220/
2360
全新原装进口自己库存优势
询价
IR
06+
TO-220
8000
自己公司全新库存绝对有货
询价
IR/FSC
17+
TO-220
6200
询价
IR
24+
原厂封装
5000
原装现货假一罚十
询价
IR
23+
TO-220
20000
原装正品,假一罚十
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
更多IRF9630供应商 更新时间2026-4-24 14:14:00