Dual P-Channel Enhancement Mode MOSFET

Description The IRF9358 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = -30V,ID = -11A RDS(ON)

文件：596.69 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

采用 SO-8 封装的 -30V 双 P 通道 HEXFET 功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)\n• Reduced design complexity in high-side configuration (vs N-channel device)\n• Easier ;

Infineon

英飞凌

Charge and Discharge Switch for Notebook PC Battery Application

文件：280.74 Kbytes 页数：8 Pages

IRF

Industry-Standard SO-8 Package

文件：280.74 Kbytes 页数：8 Pages

IRF

Industry-Standard SO-8 Package

文件：280.74 Kbytes 页数：8 Pages

IRF

Charge and Discharge Switch for Notebook PC Battery Application

文件：280.74 Kbytes 页数：8 Pages

IRF

Industry-Standard SO-8 Package

文件：280.74 Kbytes 页数：8 Pages

IRF