Power MOSFET(Vdss=30V, Rds(on)max=0.008ohm, Id=14A)

SMPS MOSFET Benefits • Ultra-Low RDS(on) at 4.5V VGS • Low Charge and Low Gate Impedance to Reduce Switching Losses • Fully Characterized Avalanche Voltage and Current Applications • High Frequency DC-DC Converters with Synchronous Rectification

文件：84.73 Kbytes 页数：7 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use ● High Frequency Buck Converters for Computer Processor

文件：176.87 Kbytes 页数：8 Pages

IRF

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.05311 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

High Frequency Buck Converters for Computer Processor Power

文件：182.32 Kbytes 页数：8 Pages

IRF

High Frequency Buck Converters for Computer Processor Power

文件：182.32 Kbytes 页数：8 Pages

IRF