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IRF6623TRPBF中文资料PDF规格书
IRF6623TRPBF规格书详情
Description
The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
• RoHS Compliant
• Lead-Free (Qualified up to 260°C Reflow)
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• High Cdv/dt Immunity
• Low Profile (<0.7mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6623TRPBF
- 功能描述:
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEONTECHNOLOGIESASIAPACIFI |
22+ |
23509 |
郑重承诺只做原装进口货 |
询价 | |||
Infineon/英飞凌 |
MG-WDSON-5 |
6000 |
询价 | ||||
Infineon Technologies |
21+ |
DIRECTFET? ST |
4800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
21+ |
QFN |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
Infineon/英飞凌 |
21+ |
MG-WDSON-5 |
8800 |
公司只作原装正品 |
询价 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
INFINEON |
22+ |
sot |
7500 |
原厂批价一手货源,市场优惠价格 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
04+ |
QFN |
15770 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
Infineon Technologies |
24+ |
DIRECTFET? ST |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 |