IRF6622中文资料IRF数据手册PDF规格书

描述 Description

The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.

The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge.

• RoHs Compliant Containing No Lead and Bromide

• Low Profile (<0.6 mm)

• Dual Sided Cooling Compatible

• Ultra Low Package Inductance

• Optimized for High Frequency Switching

• Ideal for CPU Core DC-DC Converters

• Optimized for Control FET Socket

• Low Conduction and Switching Losses

• Compatible with existing Surface Mount Techniques