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IRF6623TR1中文资料IRF数据手册PDF规格书
IRF6623TR1规格书详情
Description
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with Existing Surface Mount Techniques
产品属性
- 型号：
IRF6623TR1
- 功能描述：
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2447 |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Infineon Technologies |
2022+ |
DirectFET? 等容 ST |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 | |||
IOR |
24+ |
QFN |
369 |
询价 | |||
IR |
23+ |
PLL |
999999 |
原装正品现货量大可订货 |
询价 | ||
IR |
1923+ |
DIRECTFET |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
IR |
0651+ |
QFN |
995 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
PLL |
12000 |
全新原装优势 |
询价 | ||
IOR |
2006 |
DIRECTFET |
898 |
原装现货海量库存欢迎咨询 |
询价 |
