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IRF6623TR1中文资料IRF数据手册PDF规格书
IRF6623TR1规格书详情
Description
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with Existing Surface Mount Techniques
产品属性
- 型号：
IRF6623TR1
- 功能描述：
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
6920 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
23+ |
DIRECTFET ST |
20000 |
全新原装假一赔十 |
询价 | ||
IR |
0651+ |
QFN |
995 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
24+ |
PLL |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
IR |
25+ |
PLL |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
17+ |
DIRECTFETST |
9600 |
只做全新进口原装,现货库存 |
询价 | ||
IR |
23+ |
PLL |
999999 |
原装正品现货量大可订货 |
询价 | ||
IR |
21+ |
DIRECTFET |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IR |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
