IRF6608中文资料IRF数据手册PDF规格书
IRF6608规格书详情
描述 Description
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● Low Switching Losses
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
产品属性
- 型号：
IRF6608
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
450 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
23+ |
SMD |
20000 |
全新原装假一赔十 |
询价 | ||
INTERNATIONALRECTIFIER |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IOR |
2016+ |
QFN |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
IR |
23+ |
NA |
1000 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 | ||
IR |
17+ |
SMD |
12000 |
只做全新进口原装,现货库存 |
询价 | ||
IR |
21+ |
DIRECTFET |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IOR |
23+ |
QFN |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
24+ |
SMD |
26200 |
原装现货,诚信经营! |
询价 | ||
IR |
22+ |
FQN |
8000 |
原装正品支持实单 |
询价 |
