IRF6607中文资料IRF数据手册PDF规格书
IRF6607规格书详情
Description
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• High Cdv/dt Immunity
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号：
IRF6607
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
24+ |
SMD |
5000 |
全新原装正品,现货销售 |
询价 | ||
IR |
2016+ |
SMD |
4800 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
24+ |
DirectFET |
6000 |
全新原装正品现货,假一赔佰 |
询价 | ||
IR |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
IR |
2447 |
DirectFET |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IOR |
23+ |
QFN |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
1923+ |
QFN |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
23+ |
DirectFET |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IOR |
24+ |
QFN |
25 |
询价 | |||
IR |
0613+ |
SMD |
4797 |
承诺原装正品,报价以当天为准 |
询价 |
