IRF6604中文资料PDF规格书
IRF6604规格书详情
Description
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6604
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
SMD |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
20+ |
SMD |
32970 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
2016+ |
DirectFET |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
23+ |
QFN |
28000 |
原装正品 |
询价 | ||
IR |
23+ |
QFN |
9896 |
询价 | |||
IR |
23+ |
QFN |
7750 |
全新原装优势 |
询价 | ||
IR |
2020+ |
QFN |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
21+ |
SMD |
100000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
IR |
23+ |
DIRECTFET |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
23+ |
QFN |
23290 |
全新原装现货特价销售,欢迎来电查询 |
询价 |