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IRF640N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640N

AdvancedProcessTechnology

IRF

International Rectifier

IRF640N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF640N

N-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤150mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF640N

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640NL

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640NL

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-262packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplic

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRF640B

  • 制造商:

    Fairchild Semiconductor Corporation

供应商型号品牌批号封装库存备注价格
FAIRCHILD
25+23+
TO220
13397
绝对原装正品全新进口深圳现货
询价
FAIRCHILD/仙童
25+
TO 220
154786
明嘉莱只做原装正品现货
询价
FSC
25+
TO-220
6500
十七年专营原装现货一手货源,样品免费送
询价
FAIRCHILD
24+
TO-220-3
8866
询价
FSC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
仙童
06+
TO-220
5000
原装
询价
FAIRCHILD
23+
TO-220
9526
询价
N/A
SOP
630
正品原装--自家现货-实单可谈
询价
FSC
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
FSC
17+
TO-220
6200
询价
更多IRF640B供应商 更新时间2025-5-15 16:49:00