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IRF630STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半导体

IRF630STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF630STRR

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF630STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI630

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=5.9A)

200VN-ChannelMOSFET

IRF

International Rectifier

IRFI630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI630G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI630G

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=5.9A)

200VN-ChannelMOSFET

IRF

International Rectifier

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