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IRL630

HEXFETPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRL630

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

IRL630

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

IRL630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=9A FEATURES ♦Logic-LevelGateDrive ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRL630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL630PBF

HEXFET짰PowerMOSFET

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630PBF

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半导体

IRL630S

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableo

IRF

International Rectifier

IRL630S

AvailableinTapeandReel

VishayVishay Siliconix

威世科技威世科技半导体

IRL630S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF630NSTRL

  • 功能描述:

    MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON/IR
1907+
NA
1600
20年老字号,原装优势长期供货
询价
INFINEON/英飞凌
25+
TO263
32000
INFINEON/英飞凌全新特价IRF630NSTRLPBF即刻询购立享优惠#长期有货
询价
IR
16+
TO-263
6292
全新原装/深圳现货库2
询价
INFINEON/英飞凌
24+
TO-263
18435
原装进口假一罚十
询价
INFINEON
25+
TO-263
8000
原装正品!!!优势库存!0755-83210901
询价
INFINEON/英飞凌
24+
TO-263
248
只做原厂渠道 可追溯货源
询价
INFINEON/IR
18+
1600
TO-263-3 (D2PAK)
询价
INFINEON/英飞凌
2021+
TO-263
9000
原装现货,随时欢迎询价
询价
INFINEON/英飞凌
21+
TO-263
60000
绝对原装正品现货,假一罚十
询价
更多IRF630NSTRL供应商 更新时间2025-7-14 20:32:00