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IRFS630A

SEMICONDUCTORS

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IRFS630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IRF630NLPBF

  • 功能描述:

    MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-262
100
只做原厂渠道 可追溯货源
询价
IR
24+
TO-262-3
1944
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
11+PBF
TO-262
500
现货
询价
INFINEON
1503+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
23+
TO-262
50000
全新原装正品现货,支持订货
询价
IR
21+
TO-262
10000
原装现货假一罚十
询价
更多IRF630NLPBF供应商 更新时间2025-7-14 16:36:00