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MBR6100CT

SCHOTTKYBARRIERRECTIFIERS

FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Lowpowerloss,highefficiency. •Lowforwardvoltage,highcurrentcapability. •Highsurgecapacity. •Foruseinlowvoltage,highfrequen

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MBR6100CT

SCHOTTKYBARRIERRECTIFIERS

FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvoltge,highcurrentcapability •Highsurg

KERSEMI

Kersemi Electronic Co., Ltd.

MBR6100F

SCHOTTKYBARRIERRECTIFIERS

FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Lowpowerloss,highefficiency. •Lowforwardvoltage,highcurrentcapability •Highsurgecapacity. •Foruseinlowvoltage,highfrequency

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MBR6100FCT

SCHOTTKYBARRIERRECTIFIERS

FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Lowpowerloss,highefficiency. •Lowforwardvoltge,highcurrentcapability •Highsurgecapacity. •Foruseinlowvoltage,highfrequency

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MBR6100G

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

MBRD6100CT

6AmpSchottkyBarrierRectifier100Volts

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MBRD6100CT

SchottkyBarrierRectifier

Good-Ark

GOOD-ARK Electronics

MBRD6100CT

Schottkybarrierrectifier

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

MBRD6100CT

SCHOTTKYRECTIFIER

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

MBRD6100CT

DualCommon-CathodeHigh-VoltageSchottkyRectifier

BWTECH

Bruckewell Technology LTD

详细参数

  • 型号:

    IRF6100

  • 功能描述:

    MOSFET P-CH 20V 5.1A FLIP-FET

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
25+
BGA-4
32000
INFINEON/英飞凌全新特价IRF6100即刻询购立享优惠#长期有货
询价
IR
23+
BGA-4
5000
原装正品,假一罚十
询价
IR
24+
原厂封装
24000
原装现货假一罚十
询价
IR
2020+
QFN
5990
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
24+
BGA-4
5000
只做原装公司现货
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
25+23+
BGA-4
28276
绝对原装正品现货,全新深圳原装进口现货
询价
IR
23+
BGA-4
999999
原装正品现货量大可订货
询价
IR
19+
BGA-4
20000
2050
询价
IR
24+
BGA-4
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
更多IRF6100供应商 更新时间2025-7-24 17:54:00