IRL530

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

IRL530A

AdvancedPowerMOSFET

BVDSS=100V RDS(on)=0.12Ω ID=14A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101Ω(Typ.)

IRL530N

HEXFETPowerMOSFET

IRL530N

N-ChannelMOSFETTransistor

IRL530NL

IscN-ChannelMOSFETTransistor

IRL530NLPBF

HEXFETPowerMOSFET(VDSS=100V,RDS(on)=0.10廓,ID=17A)

IRL530NLPBF

AdavancedProcessTechnology

IRL530NPBF

ADVANCEDPROCESSTECHNOLOGY

IRL530NPBF

AdavancedProcessTechnology

IRL530NS

HEXFETPowerMOSFET