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IRF830

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

IRF830

Highcurrent,highspeedswitching

Description TheIRF830isanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETsandisobtainedthroughanextremeoptimizationlayoutdesign,inadditionaltopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapability,providesuper

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微电子新硅能微电子(苏州)有限公司

IRF830

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=500V;RDS(ON)≤1.5Ω;ID=4.5A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF830

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

VDSS=500Volts RDS(on)=1.5Ohms ID=4.0Amperes Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplications suchaspowersupplies,PWM

DCCOM

Dc Components

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF830

PowerFieldEffectTransistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5Ω ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds •LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半导体安森美半导体公司

IRF830

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRF830

HighPowerFactor/LowTHD

IRF

International Rectifier

IRF830

4.5A500VNCHANNELPOWERMOSFET

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.cconverters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF830issuppliedin

FCIFirst Components International

戈采戈采企业股份有限公司

详细参数

  • 型号:

    IRC830

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

供应商型号品牌批号封装库存备注价格
IR
24+
TO-2205-Pin(HEXSen
8866
询价
IR
23+
TO-2205-Pin(
8600
全新原装现货
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-22O-5L
65480
询价
IR
23+
TO-220-5
50000
全新原装正品现货,支持订货
询价
VB
21+
TO-220
10000
原装现货假一罚十
询价
IR
22+
TO-2205-PIN(HEXSENSE
6000
十年配单,只做原装
询价
I
23+
TO-220
6000
原装正品,支持实单
询价
IR
17+
TO-220-5
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多IRC830供应商 更新时间2025-7-13 16:30:00