Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

HEXFET® Power MOSFET ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Current Sense ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements

文件：225.83 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Infineon

英飞凌

MOSFET N-CH 250V 14A TO-220-5

Vishay

威世科技

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：900.35 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applicat

文件：173.37 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.64378 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技