HALF-BRIDGE DRIVER

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：181.99 Kbytes 页数：8 Pages

IRF

Gate drive supply range from 10 to 20V

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：298.87 Kbytes 页数：24 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：294.55 Kbytes 页数：24 Pages

IRF

HALF-BRIDGE DRIVER

文件：375.29 Kbytes 页数：24 Pages

INFINEON

英飞凌

600 V 半桥栅极驱动器IC, 具有关断和可编程时间

600 V 半桥驱动器 IC,具有典型的 1.9 A 拉电流和 2.3 A 灌电流，采用 14 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 14 引脚 SOIC、8 引脚 SOIC 和 8 引脚 PDIP 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：10 至 20V\n• 双通道欠压锁定\n• 3.3V 和 5 V 输入逻辑兼容\n• 双通道的匹配传播延迟\n• 逻辑和电源接地 +/- 5 V 偏移\n• 较低的 di/dt 栅极驱动器可获得更好的抗噪声性\n• 输出拉/灌电流能力为 1.4A/1.8A\n\n优势:;

Infineon

英飞凌

Package：14-DIP（0.300"，7.62mm）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14DIP

INFINEON

英飞凌

HALF-BRIDGE DRIVER

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：294.55 Kbytes 页数：24 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：294.55 Kbytes 页数：24 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：181.99 Kbytes 页数：8 Pages

IRF

Gate drive supply range from 10 to 20V

Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L

文件：298.87 Kbytes 页数：24 Pages

IRF