HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：445.59 Kbytes 页数：21 Pages

INFINEON

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS

文件：364.43 Kbytes 页数：21 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：264.99 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：370.01 Kbytes 页数：21 Pages

IRF

600 V高边和低边栅极驱动器IC，具有独立的逻辑接地引脚

600 V 高边和低边驱动器 IC,具有典型的 1.9 A 拉电流和 2.3 A 灌电流，采用 14 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 14 引脚 SOIC、8 引脚 SOIC 和 8 引脚 PDIP 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：10 至 20V\n• 双通道欠压锁定\n• 3.3V 和 5 V 输入逻辑兼容\n• 双通道的匹配传播延迟\n• 逻辑和电源接地 +/- 5 V 偏移\n• 较低的 di/dt 栅极驱动器可获得更好的抗噪声性\n• 输出拉/灌电流能力为 1.4A/1.8A\n\n优势:;

Infineon

英飞凌

Package：14-DIP（0.300"，7.62mm）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14DIP

INFINEON

英飞凌

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS

文件：364.43 Kbytes 页数：21 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：264.99 Kbytes 页数：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS

文件：364.43 Kbytes 页数：21 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：445.59 Kbytes 页数：21 Pages

INFINEON

英飞凌