Image Rejection Mixers

文件：99.9 Kbytes 页数：1 Pages

BOWEI

博威集成电路

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

文件：140.22 Kbytes 页数：2 Pages

Motorola

摩托罗拉

N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 2.5 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALAN

文件：92.75 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

文件：322.92 Kbytes 页数：6 Pages

Samsung

三星