IQXT-260说明书PDF资料市场行情尼尔半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IQXT-260	文件：317.39 Kbytes Page：4 Pages	TCXO Specification 文件：317.39 Kbytes 页数：4 Pages	IQD	IQD
IRF260	文件：438.62 Kbytes Page：7 Pages	N-Channel Power MOSFET 文件：438.62 Kbytes 页数：7 Pages	NELLSEMI 尼尔半导体	NELLSEMI
IRFB260	文件：90.7 Kbytes Page：8 Pages	Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current 文件：90.7 Kbytes 页数：8 Pages	IRF	IRF
IRFB260N	文件：90.7 Kbytes Page：8 Pages	Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) SMPS MOSFET VDSS RDS(on) max ID 200V 0.040Ω 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current 文件：90.7 Kbytes 页数：8 Pages	IRF	IRF

更多IQXT-260供应商更新时间2025-12-2 16:30:00