Frequency 1.0MHz to 800.0MHz

文件：288.22 Kbytes 页数：2 Pages

IQD

VCXO Specification

文件：288.22 Kbytes 页数：2 Pages

IQD

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)

文件：174.72 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

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VISHAYVishay Siliconix

威世威世科技公司