VCXO Specification

文件：288.22 Kbytes 页数：2 Pages

IQD

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)

文件：174.72 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：132.41 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

1A, 100V, 0.600 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：52.55 Kbytes 页数：6 Pages

INTERSIL