500V CoolMOS짧 CE Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：1.88051 Mbytes 页数：14 Pages

INFINEON

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600V CoolMOS??P6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：2.27598 Mbytes 页数：18 Pages

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丝印：6R125C6；Package：PG-TO247；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features * Extremely low losses due to very low FOM Rdson Qg and Eoss * Very high comutation ruggedness * Easy to ues/drive * JEDEC qualified, Pb-free plating, Halogen free

文件：1.26355 Mbytes 页数：18 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.The offered devi

文件：3.13959 Mbytes 页数：19 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：3.10731 Mbytes 页数：19 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件：3.11524 Mbytes 页数：19 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offere

文件：1.59291 Mbytes 页数：19 Pages

INFINEON

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600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.9811 Mbytes 页数：17 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件：3.09063 Mbytes 页数：19 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件：3.09082 Mbytes 页数：19 Pages

INFINEON

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