丝印：6R380C6；Package：PG-TO252；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features * Extermely low losses due to very low FOM Rdson Qg and Eoss * Very high commutation ruggedness * Easy to use/drive,Pb-free plating, Halogen free * Fully qualified according to JEDEC for Industrial Applications

文件：1.4056 Mbytes 页数：19 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ P6 series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The offered device

文件：2.88247 Mbytes 页数：19 Pages

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered

文件：1.05442 Mbytes 页数：16 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

文件：2.85536 Mbytes 页数：19 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 页数：20 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：2.33045 Mbytes 页数：16 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

文件：3.82385 Mbytes 页数：20 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件：3.83053 Mbytes 页数：20 Pages

INFINEON

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650V CoolMOS C6 Power Transistor

Features • Extremely low losses due to very FOM Rdso *Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications: Adapter

文件：2.11023 Mbytes 页数：19 Pages

INFINEON

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650V CoolMOS C6 CFD Power Transistor

650V CoolMOS C6 CFDA Power Transistor Applications 650V CoolMOS CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom

文件：6.65181 Mbytes 页数：20 Pages

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