首页 >IPW65R110CFDA>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IPW65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件:2.33045 Mbytes 页数:16 Pages

INFINEON

英飞凌

IPW65R110CFDA

20V-650V汽车级MOSFET

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌

IPX65R110CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件:3.85934 Mbytes 页数:20 Pages

INFINEON

英飞凌

IPX65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件:2.33045 Mbytes 页数:16 Pages

INFINEON

英飞凌

技术参数

  • OPN:

    IPW65R110CFDAFKSA1

  • Qualification:

    Automotive

  • Package name:

    PG-TO247-3

  • VDS max:

    650 V

  • RDS (on) @10V max:

    110 mΩ

  • ID @25°C max:

    31.2 A

  • QG typ @10V:

    118 nC

  • Special Features:

    automotive

  • Polarity:

    N

  • VGS(th) min:

    3.5 V

  • VGS(th) max:

    4.5 V

  • Technology:

    CoolMOS™ CFDA

供应商型号品牌批号封装库存备注价格
INFINEON
21+
SMD
5236
十年信誉,只做原装,有挂就有现货!
询价
INFINEON
2447+
TO-247
9657
只做原装正品假一赔十为客户做到零风险!!
询价
INFINEON/英飞凌
25+
TO-247
12496
INFINEON/英飞凌原装正品IPW65R110CFDA即刻询购立享优惠#长期有货
询价
INFINEON
23+
TO-247
7200
全新原装假一赔十
询价
INFINEON
25+
TO-247
6000
全新原装现货、诚信经营!
询价
INFINEON
23+
TO-247
18000
只有原装,价格最低
询价
INFINEON/英飞凌
25+
TO-247
15000
原装现货假一赔十
询价
Infineon(英飞凌)
24+
PG-TO247-3
5625
只做原装现货假一罚十!价格最低!只卖原装现货
询价
INFINEON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Infineon(英飞凌)
23+
25900
新到现货,只有原装
询价
更多IPW65R110CFDA供应商 更新时间2026-4-17 17:19:00