isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 63.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.048Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

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ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件：1.12157 Mbytes 页数：14 Pages

INFINEON

英飞凌

650V CoolMOS CFDA Power Transistor

650V CoolMOS CFDA Power Transistor Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Easy to use/drive • Qualified according to AEC Q101 • Green package (RoHS compliant), Pb-free plating, halogen free for mold

文件：1.12157 Mbytes 页数：14 Pages

INFINEON

英飞凌

20V-650V汽车级MOSFET

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌