丝印：009N06N；Package：PG-HSOF-8；MOSFET OptiMOSTM5 Power-Transistor, 60 V

Features • 100 avalanche tested • Superior thermal resistance • N-channel, normal level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：884.78 Kbytes 页数：11 Pages

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英飞凌

OptiMOS ™ 5 N沟道功率MOSFET 60 V 0.9 mΩ 采用TOLL封装

英飞凌的 TO-Leadless 封装针对叉车、轻型电动车 (LEV)、负载点 (POL) 和电信等大电流应用进行了优化。该封装是高功率应用的完美解决方案，适用于需要最高效率、出色的 EMI 行为以及最佳热性能和减少空间的应用。 • 高额定电流 >400 A\n• 与 D2PAK 相比，节省空间和封装\n• 极低的封装寄生电感\n• 由于焊料接触面积增大，显著降低了电迁移;

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.22838 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOSTM 5 Power-Transistor, 60 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.11212 Mbytes 页数：11 Pages

INFINEON

英飞凌

MOSFET OptiMOS™ 5 Power‑Transistor, 60 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：857.43 Kbytes 页数：12 Pages

INFINEON

英飞凌