首页 >IPP60R600CP>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IPP60R600CP

CoolMOS Power Transistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: •Hards

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R600CP

N-Channel MOSFET Transistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

60R600CP

CoolMosPowerTransistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: •Hards

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IIPD60R600CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R600CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R600CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R600CP

CoolMosPowerTransistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: •Hards

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPAW60R600CE

600VCoolMOS짧CEPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R600CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB60R600CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPP60R600CP

  • 功能描述:

    MOSFET COOL MOS PWR TRANS 650V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
TO-220
7793
支持大陆交货,美金交易。原装现货库存。
询价
INFINEON
2016+
TO-220F
6528
房间原装进口现货假一赔十
询价
INFINEON
24+
PG-TO220-3
8866
询价
INFINEON
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
INFINEO
24+
TO220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR/INFINEON
23+
TO220
50000
全新原装正品现货,支持订货
询价
INFINEON
21+
TO220
10000
原装现货假一罚十
询价
INFINEON
1130+
TO220
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
询价
更多IPP60R600CP供应商 更新时间2025-6-11 16:12:00