IPP60R230P6规格书供应代理无锡固电ISC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IPP60R230P6	文件：3.11524 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP60R230P6	文件：338.48 Kbytes Page：2 Pages	N-Channel MOSFET Transistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.23Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPP60R230P6	文件：338.48 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.23Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW60R230P6	文件：335.66 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤230mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA60R230P6	文件：3.11524 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA60R230P6	文件：3.11524 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA60R230P6	文件：267.63 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB60R230P6	文件：189.48 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB60R230P6	文件：3.11524 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB60R230P6	文件：33.27 Kbytes Page：1 Pages	MaterialContentDataSheet	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPW60R230P6	文件：2.63848 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPW60R230P6	文件：335.66 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤230mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPW60R230P6	文件：3.11524 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPX60R230P6	文件：3.11524 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市中利达电子科技有限公司	IPP60R230P6	inf进口原	22+	TO-220	18	长源创新-只做原装---假一赔十	询价
深圳市华斯顿科技有限公司	IPP60R230P6	inf进口原	22+23+	TO-220	22281	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	IPP60R230P6	inf进口原	19+	TO-220	9860	一级代理	询价
深圳市纳艾斯科技有限公司	IPP60R230P6	INFINEO	2020+	TO-220	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
京海半导体(深圳)有限公司	IPP60R230P6	inf进口原	21+	TO-220	10000	原装现货假一罚十	询价
深圳市科恒伟业电子有限公司	IPP60R230P6	INFINEON/英飞凌	21+	TO-220	9800	只做原装正品假一赔十!正规渠道订货!	询价
深圳市河锋鑫科技有限公司	IPP60R230P6	INFINEON	22+	TO-220	8000	终端可免费供样,支持BOM配单	询价
无锡固电半导体股份有限公司	IPP60R230P6	isc	2024	TO-220	10000	国产品牌isc,可替代原装	询价
深圳市华来深电子有限公司	IPP60R230P6	INFINEO	23+	TO-220	8560	受权代理!全新原装现货特价热卖!	询价
深圳市创新迹电子有限公司	IPP60R230P6	inf进口原	23+	TO-220	7300	专注配单,只做原装进口现货	询价

更多IPP60R230P6供应商更新时间2024-5-30 8:40:00

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