Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件：3.11524 Mbytes 页数：19 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.23Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de

文件：338.48 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。 • 减少栅极电荷 (Qg)\n• 更高的 Vth\n• 体二极管耐久性良好\n• 经过优化的集成 Rg\n• dv/dt 从 50V/ns\n• 提高CoolMOS™ 的质量得益于英飞凌在超结技术领域拥有超过 12 年的制造经验\n\n优势:\n• 提高了效率，特别是在轻载条件下\n• 具备提前关闭功能，可提高软开关应用效率\n• 适用于硬开关和软开关拓扑\n• 优化了效率与易用性以及对开关行为的良好控制性之间的平衡\n• 坚固性高，效率更高\n• 出色的质量和可靠性;

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件：3.11524 Mbytes 页数：19 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤230mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.66 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件：2.63848 Mbytes 页数：19 Pages

INFINEON

英飞凌