IPP60R1K4C6

N-Channel MOSFET Transistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p

IPP60R1K4C6

Metal Oxide Semiconductor Field Effect Transistor

VCoolMOSC6PowerTransistor Applications   PFCstages,hardswitchingPWMstagesandresonantswitchingPWM   stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,   TelecomandUPS.

IIPD60R1K4C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IIPP60R1K4C6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p

IPD60R1K4C6

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IPD60R1K4C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPD60R1K4C6

600VCoolMOSC6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

IPU60R1K4C6

iscN-ChannelMOSFETTransistor

IPU60R1K4C6

MetalOxideSemiconductorFieldEffectTransistor

IPU60R1K4C6

MaterialContentDataSheet