丝印：60R160P7；Package：PG-TO220-3；600V CoolMOSª P7 Power Transistor

Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a

文件：1.63173 Mbytes 页数：14 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12.5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：397.16 Kbytes 页数：2 Pages

ISC

无锡固电

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensur Efficiency\n • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n • Integrated ESD diode from 180mN and above RDS(on)s\n• Integrated gate resistor RG\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial grade pa;

Infineon

英飞凌

600V CoolMOSª P7 Power Device

Features • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Excellent ESD robustness >2kV (HBM) for all products • Better RDS(on)/package products compared to competition enabled by a

文件：1.10689 Mbytes 页数：14 Pages

INFINEON

英飞凌