Metal Oxide Semiconductor Field Effect Transistor

文件：1.53705 Mbytes 页数：14 Pages

Infineon

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isc N-Channel MOSFET Transistor

• FEATURES • With low gate drive requirements • Very high commutation ruggedness • Extremely high frequency operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • LCD&PDP TV •

文件：319.42 Kbytes 页数：2 Pages

ISC

无锡固电

500V CoolMOS??CE Power MOSFET

500V CoolMOS™ CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing eas

文件：1.16499 Mbytes 页数：2 Pages

Infineon

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500V Superjunction MOSFET for Consumer and Lighting Applications

500V CoolMOS™ CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing eas

文件：879.43 Kbytes 页数：20 Pages

Infineon

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500V CoolMOS짧 CE Power Transistor

500V CoolMOS™ CE Power Transistor ​​​​​​​ CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ CE is aprice-performance optimized platform enabling to target cost sensitiveappl

文件：1.75232 Mbytes 页数：13 Pages

Infineon

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500V CoolMOS짧 CE Power Transistor

500V CoolMOS™ CE Power Transistor ​​​​​​​ CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ CE is aprice-performance optimized platform enabling to target cost sensitiveappl

文件：1.75232 Mbytes 页数：13 Pages

Infineon

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Metal Oxide Semiconductor Field Effect Transistor

文件：1.53705 Mbytes 页数：14 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

500V CoolMOS™ CE 是一款高性价比的平台，能够满足消费产品和照明市场中成本敏感型应用，同时仍然能满足高效率标准。该新系列具备快速开关超结 MOSFET 的所有优点，同时又不牺牲易用性，并且具有市场上出色的成本性能比。 • 减少储存在输出电容中的能量 (Eoss)\n• 体二极管耐久性良好\n• 减少反向恢复电荷 (Qrr)\n• 减少栅极电荷 (Qg)\n\n优势:\n• 易于控制开关行为\n• 与之前的几代 CoolMOS™ 相比，具有更高的轻载效率\n• 与标准 MOSFET 相比，成本更具吸引力\n• 杰出的 CoolMOS™ 技术质量和可靠性;

Infineon

英飞凌