N-Channel MOSFET Transistor

文件：338.66 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOSTM3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

文件：426.99 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：320N20N；Package：PG-TO220-3；OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOSTM3 Power-Transistor

文件：425.21 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOSTM3 Power-Transistor

文件：425.21 Kbytes 页数：11 Pages

INFINEON

英飞凌

MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3

Infineon

英飞凌