N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=64A@ TC=25℃ · Drain Source Voltage -VDSS=250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS ·Ideal for high-frequency switching and synchronous rectification

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ISC

无锡固电

N-Channel MOSFET Transistor

文件：338.32 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

文件：427.94 Kbytes 页数：11 Pages

INFINEON

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OptiMOS3 Power-Transistor

文件：719.12 Kbytes 页数：11 Pages

INFINEON

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OptiMOSTM3 Power-Transistor

文件：764.46 Kbytes 页数：11 Pages

INFINEON

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OptiMOS3 Power-Transistor

文件：719.12 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOSTM3 Power-Transistor

文件：764.46 Kbytes 页数：11 Pages

INFINEON

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N 沟道功率 MOSFET

Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. • Industry’s lowest R DS(on)\n• Lowest Q g and Q gd\n• World’s lowest FOM RoHS comliant − halogen free MSL 1 rated\n\n优势:\n• Highest efficiency\n• Highest Power density\n• Lowest board space consumption\n• Minimal device paralleling required\n• System cost improvement\n• Enviromentally friendly\n• E;

Infineon

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