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HLDG110N06

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HY110N06T

55V/110AN-ChannelEnhancementModeMOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features •LowOn-StateResistance •ExcellentGateChargexRDS(ON)Product(FOM) •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl •I

HY

HY ELECTRONIC CORP.

IPB110N06L

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB110N06LG

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB110N06L-G

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP110N06L

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP110N06LG

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IXFK110N06

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching

IXYS

IXYS Corporation

IXFK110N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TSM110N06

55VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

供应商型号品牌批号封装库存备注价格
INFINEON
23+
8000
只做原装现货
询价
INFINEON
23+
7000
询价
INFN
25+23+
TO220
47536
绝对原装正品现货,全新深圳原装进口现货
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INFN
23+
TO220
50000
全新原装正品现货,支持订货
询价
INFN
21+
TO220
10000
原装现货假一罚十
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INFINEON
TO-220
22+
6000
十年配单,只做原装
询价
INFINEON
23+
TO-220
6000
原装正品,支持实单
询价
INFINE0N
1049+
TO220
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINE0N
23+
TO220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
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INFN
24+
NA/
3415
原装现货,当天可交货,原型号开票
询价
更多IPP110N06L-G供应商 更新时间2025-7-25 15:01:00