OptiMOS짰 Power-Transistor

文件：446.14 Kbytes 页数：10 Pages

INFINEON

英飞凌

OptiMOS® Power-Transistor

Infineon

英飞凌

MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体