IPP096N03L G

20V-300V N-Channel Power MOSFET; ·Ultra low gate and output charge\n ·Lowest on-state resistance in small footprint packages\n ·Easy to design in\n;

With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. \nUltra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. \nAvailable in halfbridge configuration (power stage 5x6)

IPB096N03LG

OptiMOS3Power-Transistor

IPB096N03LG

OptiMOS3Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro

IPP096N03L

OptiMOS??Power-Transistor

IPP096N03LG

OptiMOS3Power-Transistor

IPP096N03LG

OptiMOS3Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro