N-Channel MOSFET Transistor

文件：339.35 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS?? Power-Transistor

文件：334.96 Kbytes 页数：9 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilites for optimized solutions. • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• S;

Infineon

英飞凌

N-Channel 120-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：355.37 Kbytes 页数：5 Pages

ANALOGPOWER

N-Channel MOSFET Transistor

文件：339.35 Kbytes 页数：2 Pages

ISC

无锡固电