丝印：70S1K5；Package：PG-SOT223；700V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

文件：1.06179 Mbytes 页数：13 Pages

Infineon

英飞凌

Cost-effective drop-in replacement for DPAK

Infineon is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from • Drop-in replacement for DPAK at lower cost\n• Space savings in designs with low power dissipation\n• Comparable thermal behavior to DPAK\n\n优势:\n• 从典型的 R Ds（开启）到标称之间较大裕度的低传导损耗\n• 优化输出电容带来的低开关损耗 (E oss)\n• 优化电磁干扰，以平衡开关速度和电磁干扰行为\n• 集成 Rg 的良好控制性;

Infineon

英飞凌

700V Super-Junction Power MOSFET

文件：1.16031 Mbytes 页数：13 Pages

WUMC

紫光国微

700V Super-Junction Power MOSFET

文件：1.16031 Mbytes 页数：13 Pages

WUMC

紫光国微

700V Super-Junction Power MOSFET

文件：1.16031 Mbytes 页数：13 Pages

WUMC

紫光国微