丝印：60S2K0D7；Package：PG-SOT223；600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

文件：718.85 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：60S2K1；Package：PG-SOT223；600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

文件：1.0515 Mbytes 页数：13 Pages

Infineon

英飞凌

Cost-effective drop-in replacement for DPAK

Infineon is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from • Drop-in replacement for DPAK at lower cost\n• Space savings in designs with low power dissipation\n• Comparable thermal behavior to DPAK\n\n优势:;

Infineon

英飞凌

采用 SOT-223 封装的CoolMOS™ 超结 MOSFET

Infineon

英飞凌